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M36P0R8070E0 查看數據表(PDF) - Numonyx -> Micron
零件编号
产品描述 (功能)
生产厂家
M36P0R8070E0
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Numonyx -> Micron
M36P0R8070E0 Datasheet PDF : 22 Pages
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M36P0R8070E0
DC and AC parameters
Figure 5. AC measurement load circuit
VDDQ
VDDQ
VDD
0.1µF
0.1µF
DEVICE
UNDER
TEST
16.7k
Ω
CL
16.7k
Ω
CL includes JIG capacitance
1. V
DD
means V
DDF
= V
CCP
.
Table 5. Capacitance
(1)
Symbol
Parameter
Test Condition
C
IN
Input capacitance
C
OUT
Output capacitance
1. Sampled only, not 100% tested.
V
IN
= 0 V
V
OUT
= 0 V
AI06162
Min
Max
–
12
–
15
Unit
pF
pF
17/22
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