M464S0924CT1 查看數據表（PDF） - Samsung
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M464S0924CT1 Datasheet PDF : 9 Pages
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M464S0924CT1
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)
Parameter
Symbol
Test Condition
Operating current
(One bank active)
ICC1
Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
ICC2P
ICC2PS
ICC2N
ICC2NS
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
ICC3P
ICC3PS
ICC3N
ICC3NS
CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC =∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞
Input signals are stable
Operating current
(Burst mode)
Refresh current
ICC4
ICC5
IO = 0 mA
Page burst
4Banks activated
tCCD = 2CLKs
tRC ≥ tRC(min)
C
Self refresh current
ICC6
CKE ≤ 0.2V
L
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)
PC100 SODIMM
Version
-1H
-1L
Unit
Not
e
560
mA
1
4
mA
4
80
mA
28
20
mA
20
120
mA
80
mA
580
mA
1
840
mA
2
6
mA
3.2
mA
Rev. 0.0 April. 2000
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