M48T59Y 查看數據表（PDF） - STMicroelectronics
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M48T59Y Datasheet PDF : 21 Pages
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M48T59, M48T59Y, M48T59V
Table 5. Capacitance (1, 2)
(TA = 25 °C)
Symbol
Parameter
CIN
Input Capacitance
CIO (3) Input / Output Capacitance
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Test Condition
VIN = 0V
VOUT = 0V
Min
Max
Unit
10
pF
10
pF
Table 6. DC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75V to 5.5V or 4.5V to 5.5V or 3.0V to 3.6V)
Symbol
Parameter
Test Condition
M48T59/Y
Min
Max
M48T59V
Unit
Min
Max
ILI (1) Input Leakage Current
0V ≤ VIN ≤ VCC
±1
±1
µA
ILO (1) Output Leakage Current
0V ≤ VOUT ≤ VCC
±1
±1
µA
ICC Supply Current
Outputs open
50
30
mA
ICC1
Supply Current (Standby)
TTL
E = VIH
3
2
mA
ICC2
Supply Current (Standby)
CMOS
E = VCC – 0.2V
3
1
mA
VIL (2) Input Low Voltage
–0.3
0.8
–0.3
0.8
V
VIH Input High Voltage
2.2
VCC + 0.3
2
VCC + 0.3 V
Output Low Voltage
IOL = 2.1mA
0.4
0.4
V
VOL Output Low Voltage (IRQ/FT
and RST) (3)
IOL = 10mA
0.4
0.4
V
VOH Output High Voltage
IOH = –1mA
2.4
2.4
V
Note: 1. Outputs deselected.
2. Negative spikes of –1V allowed for up to 10ns once per cycle.
3. The IRQ/FT and RST pins are Open Drain.
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C)
Symbol
Parameter
Min
Typ
Max
M48T59
4.5
4.6
4.75
VPFD Power-fail Deselect Voltage
M48T59Y
4.2
4.35
4.5
M48T59V
2.7
2.9
3.0
M48T59/Y
VSO
Battery Back-up Switchover Voltage
M48T59V
3.0
VPFD –100mV
Grade 1
7
tDR
ExpectedDataRetentionTime(at25°C)
Grade 6
10 (2)
Note: 1. All voltages referenced to VSS.
2. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).
Unit
V
V
V
V
V
YEARS
YEARS
4/21
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