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M48T513Y-70PM1 查看數據表(PDF) - STMicroelectronics

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M48T513Y-70PM1
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48T513Y-70PM1 Datasheet PDF : 23 Pages
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M48T513Y, M48T513V
Table 3. Operating Modes (1)
Mod e
VCC
E
G
Deselect
VIH
X
Write
Read
4.5V to 5.5V
or
3.0V to 3.6V
VIL
X
VIL
VIL
Read
VIL
VIH
Deselect
VSO to VPFD (min) (2)
X
X
Deselect
VSO (2)
X
X
Note: 1. X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.
2. See Table 7 for details.
W
DQ0-DQ7
X
High Z
VIL
DIN
VIH
DOUT
VIH
High Z
X
High Z
Power
Standby
Active
Active
Active
CMOS Standby
X
High Z Battery Back-up Mode
DATA RETENTION MODE
With valid VCC applied, the M48T513Y/V operates
as a conventional BYTEWIDE static RAM. Should
the supply voltage decay, the RAM will automati-
cally deselect, write protecting itself when VCC
falls between VPFD (max), VPFD (min) window. All
outputs become high impedance and all inputs are
treated as ”don’t care”.
Note: A power failure during a write cycle may cor-
rupt data at the current addressed location, but
does not jeopardize the rest of the RAM’s content.
At voltages below VPFD (min), the memory will be
in a write protected state, provided the VCC fall
time is not less than tF. The M48T513Y/V may re-
spond to transient noise spikes on VCC that cross
into the deselect window during the time the de-
vice is sampling VCC. Therefore, decoupling of the
power supply lines is recommended.
When VCC drops below VSO, the control circuit
switches power to the internal battery, preserving
data and powering the clock. The internal energy
source will maintain data in the M48T513Y/V for
an accumulated period of at least 10 years at room
temperature. As system power rises above VSO,
the battery is disconnected, and the power supply
is switched to external VCC. Deselect continues for
tREC after VCC reaches VPFD (max). For a further
more detailed review of lifetime calculations,
please see Application Note AN1012.
TIMEKEEPER REGISTERS
The M48T513Y/V offers 16 internal registers
which contain TIMEKEEPER, Alarm, Watchdog,
Interrupt, Flag, and Control data. These registers
are memory locations which contain external (user
accessible) and internal copies of the data (usually
Table 4. AC Measurement Conditions
Input Rise and Fall Times
5ns
Input Pulse Voltages
0 to 3V
Input and Output Timing Ref. Voltages
1.5V
Note that Output Hi-Z is defined as the point where data is no longer
driven.
Figure 5. AC Testing Load Circuit
DEVICE
UNDER
TEST
650
CL = 100pF
1.75V
CL includes JIG capacitance
Note: Excluding open drain output pins.
AI01803C
referred to as BiPORTTIMEKEEPER cells).
The external copies are independent of internal
functions except that they are updated periodically
by the simultaneous transfer of the incremented
internal copy. TIMEKEEPER and Alarm Registers
store data in BCD.
5/23

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