M48T513Y-70PM1 查看數據表（PDF） - STMicroelectronics
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M48T513Y-70PM1 Datasheet PDF : 23 Pages
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M48T513Y, M48T513V
Figure 6. Power Down/Up Mode AC Waveforms
VCC
VPFD (max)
VPFD (min)
VSO
INPUTS
tF
tFB
RECOGNIZED
OUTPUTS
RST
VALID
tRB
DON’T CARE
HIGH-Z
tR
tREC
RECOGNIZED
VALID
AI01805
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70 °C)
Symbol
Parameter
Min
VPFD Power-fail Deselect Voltage
M48T513Y
4.2
M48T513V
2.7
M48T513Y
VSO
Battery Back-up Switchover Voltage
M48T513V
tDR (2) Expected Data Retention Time
10
Note: 1. All voltages referenced to VSS.
2. At 25°C.
Typ
Max
Unit
4.35
4.5
V
2.9
3.0
V
3.0
V
VPFD –100mV
YEARS
Table 8. Power Down/Up AC Characteristics
(TA = 0 to 70 °C)
Symbol
Parameter
Min
Max
Unit
tF (1)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
M48T513Y
10
µs
tFB (2)
VPFD (min) to VSS VCC Fall Time
M48T513V
150
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
0
µs
tRB
VSS to VPFD (min) VCC Rise Time
1
µs
tREC
VPFD (max) to RST High
40
200
ms
Note: 1. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200ms after VCC pass-
es VPFD (min).
2. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
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