M59DR016 查看數據表（PDF） - STMicroelectronics

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M59DR016

16 Mbit (1Mb x16, Dual Bank, Page) 1.8V Supply Flash Memory

STMicroelectronics 

M59DR016C, M59DR016D

Table 28. Data Polling and Toggle Bits AC Characteristics (1)

(TA = 0 to 70 °C or –40 to 85 °C; VDD = VDDQ = 1.65V to 2.2V)

Symbol

Parameter

M59DR016

Unit

Min

Max

Write Enable High to DQ7 Valid (Program, W Controlled)

10

tWHQ7V

Write Enable High to DQ7 Valid (Block Erase, W Controlled)

1

200

µs

10

s

Chip Enable High to DQ7 Valid (Program, E Controlled)

10

tEHQ7V

Chip Enable High to DQ7 Valid (Block Erase, E Controlled)

1

200

µs

10

s

tQ7VQV

Q7 Valid to Output Valid (Data Polling)

0

ns

tWHQV

Write Enable High to Output Valid (Program)

Write Enable High to Output Valid (Block Erase)

10

200

µs

1

10

s

tEHQV

Chip Enable High to Output Valid (Program)

Chip Enable High to Output Valid (Block Erase)

10

200

µs

1

10

s

Note: 1. All other timings are defined in Read AC Characteristics table.

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