M6MGB160S2BVP 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M6MGB160S2BVP
MITSUBISHI ELECTRIC
M6MGB160S2BVP Datasheet PDF : 30 Pages
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MITSUBISHI LSIs
M6MGB/T160S2BVP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS
3.3V-ONLY FLASH MEMORY &
2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM
Stacked-MCP (Multi Chip Package)
AC ELECTRICAL CHARACTERISTICS (Ta = -20 ~85°C)
Read-Only Mode
Limits
Symbol
Parameter
tRC tAVAV Read cycle time
ta (AD) tAVQV Address access time
ta (CE) tELQV Chip enable access time
ta (OE)
tCLZ
tDF(CE)
tGLQV
tELQX
tEHQZ
Output enable access time
Chip enable to output in low-Z
Chip enable high to output in high Z
tOLZ tGLQX Output enable to output in low-Z
tDF(OE) tGHQZ Output enable high to output in high Z
tPHZ tPLQZ F-RP# low to output high-Z
ta(BYTE) tFL/HQV BYTE# access time
tBHZ tFLQZ BYTE# low to output high-Z
tOH tOH Output hold from CE#, OE#, addresses
Speed Item: -90
Unit
F-Vcc=2.7~3.6V
Min
Typ
Max
90
ns
90
ns
90
ns
30
ns
0
ns
25
ns
0
ns
25
ns
150
ns
90
ns
25
ns
0
ns
tBCD tELFL/H F-CE# low to BYTE# high or low
5
ns
tBAD tAVFL/H Address to BYTE# high or low
5
ns
tOEH tWHGL OE# hold from WE# high
10
ns
tPS tPHEL F-RP# recovery to F-CE# low
150
ns
Timing measurements are made under AC waveforms for read operations.
AC ELECTRICAL CHARACTERISTICS (Ta = -20 ~85°C)
Write Mode (WE# control)
Limits
Symbol
Parameter
Speed Item: -90
Unit
F-Vcc=2.7~3.6V
Min
Typ
Max
tWC tAVAV Write cycle time
90
ns
tAS tAVWH Address set-up time
50
ns
tAH tWHAX Address hold time
0
ns
tDS tDVWH Data set-up time
50
ns
tDH tWHDX Data hold time
0
ns
tOEH tWHGL OE# hold from WE# high
10
ns
tRE -
Latency between Read and Write FFH or 71H
30
ns
tCS tELWL Chip enable set-up time
0
ns
tCH tWHEH Chip enable hold time
0
ns
tWP tWLWH Write pulse width
60
ns
tWPH tWHWL Write pulse width high
30
ns
tBS tFL/HWH Byte enable high or low set-up time
50
ns
tBH tWHFL/H Byte enable high or low hold time
90
ns
tGHWL tGHWL OE# hold to WE# Low
0
ns
tBLS tPHHWH Block Lock set-up to write enable high
90
ns
tBLH tQVPH Block Lockhold from valid SRD
0
ns
tDAP tWHRH1 Duration of auto-program operation
4
80
ms
tDAE tWHRH2 Duration of auto-block erase operation
40
600
ms
tWHRL tWHRL WE# high to F-RY/BY# low
90
ns
tPS tPHWL F-RP# high recovery to write enable low
150
ns
Read timing parameters during command write operations mode are the same as during read-only operations mode.
Typical values at F-Vcc=3.3V, Ta=25°C
11
Sep. 1999 , Rev.2.0
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