MA717(2001) 查看數據表（PDF） - Panasonic Corporation
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MA717 Datasheet PDF : 3 Pages
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Schottky Barrier Diodes (SBD)
MA3X717 (MA717)
Silicon epitaxial planar type
For switching circuits
For wave detection circuit
0.65 ± 0.15
+ 0.2
2.8 − 0.3
+ 0.25
1.5 − 0.05
Unit : mm
0.65 ± 0.15
1
I Features
• Optimum for low-voltage rectification because of its low forward
rise voltage (VF) (Low VF type of MA3X704A)
• Optimum for high-frequency rectification because of its short re-
verse recovery time (trr)
3
2
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
VR
30
V
IFM
150
mA
IF
30
mA
Tj
125
°C
Tstg
−55 to +125
°C
0.1 to 0.3
0.4 ± 0.2
1 : Anode
2 : NC
JEDEC : TO-236
3 : Cathode EIAJ : SC-59
Mini Type Package (3-pin)
Marking Symbol: M2M
Internal Connection
1
3
2
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
IR
VR = 30 V
VF1
IF = 1 mA
30
µA
0.3
V
Terminal capacitance
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
1.0
V
1.5
pF
Reverse recovery time*
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
Detection efficiency
η
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument Bias Application Unit N-50BU
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
479
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