MBR10150 查看數據表（PDF） - Kersemi Electronic Co., Ltd.
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MBR10150 Datasheet PDF : 3 Pages
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MBR10150CT
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
5.0
4.5
δ = 0.1 δ = 0.2
δ = 0.5
4.0
δ = 0.05
3.5
δ=1
3.0
2.5
2.0
1.5
T
1.0
0.5
0.0
IF(av) (A)
δ=tp/T
tp
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
6
5
4
3
2
T
1
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75 100 125 150 175
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
IM(A)
80
70
60
50
40
30
20
IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
0
25
Tj=175°C
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
VR(V)
50
75 100 125 150
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
200
100
50
F=1MHz
Tj=25°C
20
10
12
VR(V)
5 10 20
50 100 200
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