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MBR350 查看數據表(PDF) - ON Semiconductor

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MBR350
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MBR350 Datasheet PDF : 4 Pages
1 2 3 4
MBR350, MBR360
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2)
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
Maximum Instantaneous Reverse Current @ Rated DC Voltage (Note 3)
TL = 25°C
TL = 100°C
2. Lead Temperature reference is cathode lead 1/32 in from case.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Symbol
vF
iR
Max
Unit
V
0.600
0.740
1.080
mA
0.60
20
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0
TJ = 100°C
75°C
25°C
20
10
5.0
2.0
1.0
0.50
0.20
0.10
0.05
0.02
0.01
0.005
0.002
0
5.0
4.0
3.0
2.0
TJ = 150°C
100°C
75°C
*The curves shown are typical for the highest
voltage device in the voltage grouping. Typical
reverse current for lower voltage selections can
be estimated from these same curves if VR is
sufficiently below rated VR.
25°C
10
20
30
40
50
60
80
VR REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
SQUARE
WAVE
RATED VR
RqJA = 28°C/W
DC
0.2
0.4
0.6
0.8 1.0
1.2 1.4
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.0
TJ = 150°C
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (C°)
Figure 3. Current Derating Ambient
(Mounting Method 3 per Note 4)
http://onsemi.com
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