MC-4R128CEE6B-845 查看數據表（PDF） - NEC => Renesas Technology

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MC-4R128CEE6B-845

Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT

NEC => Renesas Technology 

MC-4R128CEE6B, 4R128CEE6C

Block Diagram

SIO 0

SIO 1

U1

SCK

CMD

VREF

SIO 0

SIO 1

U2

SCK

CMD

VREF

SIO 0

SIO 1

U3

SCK

CMD

VREF

SIO 0

SIO 1

U8

SCK

CMD

VREF

SVDD

SERIAL PD

SVDD

VDD

2 per

RDRAM

0.1 µF

0.1 µF

SCL

SWP

47 kΩ

SCL

WP

VCC

U0 SDA

SDA

VCMOS

VREF

A0 A1 A2

1 per

2 RDRAMs

0.1 µF

1 per

2 RDRAMs

Plus one

Near Connector

0.1 µF

SA0 SA1 SA2

Remarks 1. Rambus Channel signals form a loop through the RIMM module, with the exception of the SIO chain.

2. See Serial Presence Detection Specification for information on the SPD device and its contents.

Preliminary Data Sheet M14539EJ1V1DS00

7

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