Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
BS170
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in TO-92
variant envelope and intended for use
in relay, high-speed and
line-transformer drivers.
FEATURES
• Very low RDS(on).
• Direct interface to C-MOS, TTL,
etc.
• High-speed switching.
• No secondary breakdown.
QUICK REFERENCE DATA
Drain-source voltage
Gate-source voltage
Drain current (DC)
Total power dissipation up to Tamb = 25 °C
Junction temperature
Drain-source ON-resistance
VGS = 10 V; ID = 200 mA
VDS
max.
VGS
max.
ID
max.
Ptot
max.
Tj
max.
RDS(on) max.
60 V
15 V
500 mA
830 mW
150 °C
5Ω
PINNING - TO-92 VARIANT
1 = source
2 = gate
3 = drain
PIN CONFIGURATION
handbook, halfpage
1
2
3
d
g
MAM146
s
Note: Various pin configurations available.
Fig.1 Simplified outline and symbol.
April 1995
2