MWI50-12E7 查看數據表（PDF） - IXYS CORPORATION

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MWI50-12E7

IGBT Modules Sixpack, H Bridge

IXYS CORPORATION 

MWI 50-12 E7

MKI 50-12 E7

Diodes

Symbol

IF25

IF80

Conditions

TC = 25°C

TC = 80°C

Maximum Ratings

110

A

70

A

Equivalent Circuits for Simulation

Conduction

Symbol

VF

IRM

trr

RthJC

Conditions

IF = 50 A; VGE = 0 V; TVJ = 25°C

TVJ = 125°C

IF = 50 A; diF/dt = -500 A/µs; TVJ = 125°C

VR = 600 V; VGE = 0 V

(per diode)

Characteristic Values

min. typ. max.

2.2 2.6 V

1.6

V

40

A

200

ns

0.61 K/W

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 0.95 V; R0 = 24 mΩ

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 6 mΩ

Thermal Response

Module

Symbol

TVJ

TVJM

T

stg

VISOL

Md

Symbol

Conditions

operating

IISOL ≤ 1 mA; 50/60 Hz

Mounting torque (M5)

Conditions

Rpin-chip

dS

dA

R

thCH

Weight

Creepage distance on surface

Strike distance in air

with heatsink compound

Maximum Ratings

-40...+125

°C

-40...+150

°C

-40...+125

°C

2500

V~

2.7 - 3.3

Nm

Characteristic Values

min. typ. max.

5

mΩ

6

mm

6

mm

0.02

K/W

180

g

IGBT (typ.)

Cth1 = 0.22 J/K; Rth1 = 0.26 K/W

Cth2 = 1.74 J/K; Rth2 = 0.09 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.151 J/K; Rth1 = 0.483 K/W

Cth2 = 1.003 J/K; Rth2 = 0.127 K/W

Dimensions in mm (1 mm = 0.0394")

© 2004 IXYS All rights reserved

pins 5, 6, 7, 8 and 15 for MWI only

pins 5, 6, 7, 8 and 15 for MWI only

2-4

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