SMMBTA06W 查看數據表（PDF） - ON Semiconductor

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SMMBTA06W

Driver Transistor NPN Silicon

ON Semiconductor 

MMBTA06W, SMMBTA06W,

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0)

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 100 mAdc, IB = 10 mAdc)

Base−Emitter On Voltage

(IC = 100 mAdc, VCE = 1.0 Vdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

Symbol

Min

V(BR)CEO

80

V(BR)EBO

4.0

ICES

−

ICBO

−

hFE

100

100

VCE(sat)

−

VBE(on)

−

fT

100

Max

Unit

Vdc

−

Vdc

−

mAdc

0.1

mAdc

0.1

−

−

−

Vdc

0.25

Vdc

1.2

MHz

−

5.0 ms

+10 V

0

tr = 3.0 ns

TURN-ON TIME

-1.0 V

VCC

+40 V

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

TURN-OFF TIME

+VBB

VCC

+40 V

5.0 ms

tr = 3.0 ns

100

Vin

RB

5.0 mF

100

RL

OUTPUT

* CS t 6.0 pF

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

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