MRF9060LSR1(2008) 查看數據表（PDF） - Freescale Semiconductor

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MRF9060LSR1
(Rev.:2008)

RF Power Field Effect Transistor

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two - Tone Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

Gps

16

17

—

dB

Two - Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

η

36

40

—

%

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD

—

- 31

- 28

dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL

—

- 16

-9

dB

Two - Tone Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Gps

—

17

—

dB

Two - Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

η

—

39

—

%

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IMD

—

- 31

—

dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IRL

—

- 16

—

dB

Power Output, 1 dB Compression Point

(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,

f1 = 945.0 MHz)

P1dB

—

70

—

W

Common- Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,

f1 = 945.0 MHz)

Gps

—

17

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,

f1 = 945.0 MHz)

η

—

51

—

%

RF Device Data

Freescale Semiconductor

MRF9060LSR1

3

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