MRF9060LSR1(2008) 查看數據表（PDF） - Freescale Semiconductor
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MRF9060LSR1 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
18
50
17 Gps
45
16
h
40
15
14 IMD
13
12
IRL
11
VDD = 26 Vdc
Pout = 60 W (PEP)
IDQ = 450 mA
Two−Tone Measurement,
100 kHz Tone Spacing
35
−30
−10
−32
−12
−34
−14
−36
−16
10
−38
−18
930
935
940
945
950
955
960
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
18
IDQ = 650 mA
17.5
500 mA
17
16.5
450 mA
16
275 mA
15.5
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
15
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
−20
−25
−30
IDQ = 275 mA
−35
−40
−45
450 mA
500 mA
−50
650 mA
VDD = 26 Vdc
−55
f1 = 945 MHz
f2 = 945.1 MHz
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
0
VDD = 26 Vdc
−10 IDQ = 450 mA
f1 = 945 MHz
−20 f2 = 945.1 MHz
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
MRF9060LSR1
6
20
60
Gps
18
50
16
40
14
h
30
12
20
VDD = 26 Vdc
10
IDQ = 450 mA
10
f = 945 MHz
8
0
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
RF Device Data
Freescale Semiconductor
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