MRF9060LR1 查看數據表（PDF） - Freescale Semiconductor

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产品描述 (功能)

生产厂家

MRF9060LR1

RF Power Field Effect Transistor

Freescale Semiconductor 

TYPICAL CHARACTERISTICS

18

60

Gps

16

40

14

h

12

10

VDD = 26 Vdc

20

IDQ = 450 mA

f1 = 945 MHz

0

f2 = 945.1 MHz

-20

8 IMD

-40

6

-60

1

10

100

Pout, OUTPUT POWER (WATTS) PEP

Figure 8. Power Gain, Efficiency, and IMD

versus Output Power

RF Device Data

Freescale Semiconductor

MRF9060LR1 MRF9060LSR1

5−7

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