MRF9045LSR1(2004) 查看數據表（PDF） - Freescale Semiconductor
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MRF9045LSR1 Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS
20
55
19 Gps
50
18
h
45
17
VDD = 28 Vdc
Pout = 45 W (PEP)
16
IDQ = 350 mA
Two-Tone Measurement,
15
IMD
100 kHz Tone Spacing
14
IRL
13
40
-30
-12
-32
-34
-14
-36
12
-38
930
935
940
945
950
955
960
-16
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
20.0
19.5
IDQ = 525 mA
19.0
400 mA
18.5
350 mA
18.0
17.5
17.0
16.5
0.5
300 mA
VDD = 28 Vdc
f1 = 945 MHz
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
-10
VDD = 28 Vdc
-20
f1 = 945 MHz
f2 = 945.1 MHz
-30
-40
IDQ = 300 mA
-50
-60 350 mA
400 mA
525 mA
-70 0.5
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
-10
VDD = 28 Vdc
-20 IDQ = 350 mA
f1 = 945 MHz
-30 f2 = 945.1 MHz
-40
3rd Order
-50
-60
-70
-80
-90
0.5
5th Order
7th Order
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
RF Device Data
Freescale Semiconductor
20
19
18
17
16
15
14
13
0.1
70
Gps
60
50
40
30
h
VDD = 28 Vdc
IDQ = 350 mA
f1 = 945 MHz
1
10
Pout, OUTPUT POWER (WATTS) PEP
20
10
0
100
Figure 7. Power Gain, Efficiency versus
Output Power
MRF9045LR1 MRF9045LSR1
5−5
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