MRF9045LR1 查看數據表（PDF） - Freescale Semiconductor

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MRF9045LR1

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two - Tone Common - Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

Gps

17

Two - Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

η

38

3rd Order Intermodulation Distortion

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IMD

—

Input Return Loss

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 945.0 MHz, f2 = 945.1 MHz)

IRL

—

Two - Tone Common - Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

Gps

—

Two - Tone Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

η

—

3rd Order Intermodulation Distortion

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IMD

—

Input Return Loss

(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,

f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,

f2 = 960.1 MHz)

IRL

—

Power Output, 1 dB Compression Point

(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,

f1 = 945.0 MHz)

P1dB

—

Common - Source Amplifier Power Gain

(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,

f1 = 945.0 MHz)

Gps

—

Drain Efficiency

(VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA,

f1 = 945.0 MHz)

η

—

Typ

18.8

42

- 32

- 14

18.5

41

- 33

13

55

18

60

Max

Unit

—

dB

—

%

- 28

dBc

-9

dB

—

dB

—

%

—

dBc

—

dB

—

W

—

dB

—

%

RF Device Data

Freescale Semiconductor

MRF9045LR1 MRF9045LSR1

3

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