MRF9120 查看數據表（PDF） - Motorola => Freescale

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MRF9120

880 MHz, 120 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

Motorola => Freescale 

Freescale Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS (1)

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0 Vdc)

IDSS

—

—

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0 Vdc)

IDSS

—

—

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 µAdc)

VGS(th)

2

3

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 450 mAdc)

VGS(Q)

—

3.8

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 1.3 Adc)

VDS(on)

—

0.17

Forward Transconductance

(VDS = 10 Vdc, ID = 4 Adc)

gfs

—

5.3

DYNAMIC CHARACTERISTICS (1)

Output Capacitance

Coss

—

50

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Reverse Transfer Capacitance

Crss

—

2

(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

(1) Each side of device measured separately.

Max

Unit

10

µAdc

1

µAdc

1

µAdc

4

Vdc

—

Vdc

0.4

Vdc

—

S

—

pF

—

pF

(continued)

MRF9120R3 MRF9120LR3

2

MOTOROLA RF DEVICE DATA

For More Information On This Product,

Go to: www.freescale.com

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