MRF9080LSR3(2008) 查看數據表（PDF） - Freescale Semiconductor

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MRF9080LSR3
(Rev.:2008)

RF Power Field Effect Transistor

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0)

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vds, VGS = 0)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 )

IDSS

—

IDSS

—

IGSS

—

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 μAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 700 mAdc)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc)

Dynamic Characteristics (1)

Output Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

VGS(th)

2.0

VGS(Q)

—

VDS(on)

—

gfs

—

Coss

—

Crss

—

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Power Output, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

P1dB

68

Common - Source Amplifier Power Gain @ 70 W (Min)

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

Drain Efficiency @ Pout = 70 W

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

Drain Efficiency @ P1dB

(VDD = 26 Vdc, IDQ = 600 mA, f = 960 MHz)

Input Return Loss

(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 960 MHz)

1. Part is internally input matched.

Gps

17

η1

47

η2

—

IRL

9.5

Typ

—

—

—

—

3.7

0.19

8.0

73

2.9

75

18.5

52

55

12.5

Max

Unit

10

μAdc

1

μAdc

1

μAdc

4.0

Vdc

—

Vdc

0.4

Vdc

—

S

—

pF

—

pF

—

W

20

dB

—

%

—

%

—

dB

MRF9080LR3

2

RF Device Data

Freescale Semiconductor

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