MRF9080LSR3(2008) 查看數據表（PDF） - Freescale Semiconductor
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MRF9080LSR3 Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
21
20
IDQ = 1000 mA
30 Vdc
20 800 mA
600 mA
19
26 Vdc
19
VDD = 22 Vdc
400 mA
18
VDD = 26 Vdc
f = 940 MHz
T = 25°C
18
IDQ = 600 mA
f = 940 MHz
T = 25°C
17
17
1
10
100
1
10
100
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
Figure 6. Power Gain versus Output Power
21
0
20
Gps
Pout = 20 W
−5
19
70 W
−10
18
IRL
−15
17
16
15
850
VDD = 26 Vdc
IDQ = 600 mA
T = 25°C
70 W
870 890 910 930 950 970 990
f, FREQUENCY (MHz)
Pout = 20 W −20
−25
−30
1010 1030 1050
Figure 7. Power Gain and Input Return Loss
versus Frequency
120
60
110
100
50
90
h
80
40
70
60
Pout
30
50
40
VDD = 26 Vdc 20
30
IDQ = 600 mA
20
f = 940 MHz
10
10
T = 25°C
0
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency versus
Input Power
20
25°C
19
50°C
85°C
18
17
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
16
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 9. Power Gain versus Output Power
110
100
90
80
70
60
50
40
30
20
10
00
55
25°C
50
85°C
45
h
40
25°C
85°C
35
30
Pout
25
20
15
VDD = 26 Vdc
IDQ = 600 mA
10
f = 940 MHz
5
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Pin, INPUT POWER (WATTS)
Figure 10. Output Power and Efficiency versus Input
Power
RF Device Data
Freescale Semiconductor
MRF9080LR3
7
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