MRF9080LSR3 查看數據表（PDF） - Freescale Semiconductor

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MRF9080LSR3

RF Power Field Effect Transistors

Freescale Semiconductor 

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of these devices make them ideal for large−signal, common−

source amplifier applications in 26 volt base station equipment.

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

Efficiency @ P1db: 55%

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MRF9080

Rev. 5, 12/2004

MRF9080LR3

MRF9080LSR3

GSM 900 MHz FREQUENCY BAND,

75 W, 26 V

LATERAL N−CHANNEL

RF POWER MOSFETs

CASE 465−06, STYLE 1

NI−780

MRF9080LR3

CASE 465A−06, STYLE 1

NI−780S

MRF9080LSR3

Table 1. Maximum Ratings

Rating

Drain−Source Voltage

Gate−Source Voltage

Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Table 3. ESD Protection Characteristics

Test Conditions

Human Body Model

Machine Model

Symbol

VDSS

VGS

PD

Tstg

TJ

Symbol

RθJC

Value

−0.5, +65

−0.5, +15

250

1.43

−65 to +150

200

Value

0.7

Class

1 (Minimum)

M1 (Minimum)

Unit

Vdc

Vdc

W

W/°C

°C

°C

Unit

°C/W

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

© Freescale Semiconductor, Inc., 2004. All rights reserved.

Freescale Semiconductor

Wireless RF Product Device Data

MRF9080LR3 MRF9080LSR3

5−1

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