MRF9080LR3 查看數據表（PDF） - Freescale Semiconductor
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MRF9080LR3 Datasheet PDF : 12 Pages
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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0)
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
Drain−Source On−Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) (2)
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Common−Source Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
gfs
Coss
Crss
P1dB
Gps
η1
η2
IRL
Ψ
—
—
10
µAdc
—
—
1
µAdc
—
—
1
µAdc
2.0
—
4.0
Vdc
—
3.7
—
Vdc
—
0.19
0.4
Vdc
—
8.0
—
S
—
73
—
pF
—
2.9
—
pF
68
75
—
W
17
18.5
20
dB
47
52
—
%
—
55
—
%
9.5
12.5
—
dB
No Degradation In Output Power
Before and After Test
1. Part is internally input matched.
2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency
MRF9080LR3 MRF9080LSR3
5−2
Freescale Semiconductor
Wireless RF Product Device Data
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