MRF9080LSR3 查看數據表（PDF） - Freescale Semiconductor
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MRF9080LSR3 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
21
IDQ = 1000 mA
20 800 mA
600 mA
19
400 mA
18
VDD = 26 Vdc
f = 940 MHz
T = 25°C
17 1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
20
30 Vdc
26 Vdc
19
VDD = 22 Vdc
18
IDQ = 600 mA
f = 940 MHz
T = 25°C
17 1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 6. Power Gain versus Output Power
21
0
20
Gps
Pout = 20 W
-5
19
70 W
-10
18
IRL
-15
17
16
15
850
70 W
VDD = 26 Vdc
IDQ = 600 mA
T = 25°C
870 890 910 930 950 970 990
f, FREQUENCY (MHz)
Pout = 20 W -20
-25
-30
1010 1030 1050
Figure 7. Power Gain and Input Return Loss
versus Frequency
120
60
110
100
50
90
h
80
40
70
60
Pout
30
50
40
VDD = 26 Vdc
20
30
IDQ = 600 mA
20
f = 940 MHz
10
10
T = 25°C
0
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Pin, INPUT POWER (WATTS)
Figure 8. Output Power and Efficiency versus
Input Power
20
25°C
19
50°C
85°C
18
17
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
16
1
10
100
Pout, OUTPUT POWER (WATTS)
Figure 9. Power Gain versus Output Power
Freescale Semiconductor
Wireless RF Product Device Data
110
100
90
80
70
60
50
40
30
20
10
00
55
25°C
50
85°C
45
h
40
25°C
85°C
35
30
Pout
25
20
15
VDD = 26 Vdc
IDQ = 600 mA
10
f = 940 MHz
5
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.80
Pin, INPUT POWER (WATTS)
Figure 10. Output Power and Efficiency versus Input
Power
MRF9080LR3 MRF9080LSR3
5−7
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