MS1509 查看數據表（PDF） - Advanced Power Technology
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MS1509 Datasheet PDF : 3 Pages
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RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
Features
• 500 MHz
• 28 VOLTS
• POUT = 100 WATTS
• GP = 5.5 dB GAIN MINIMUM
• EFFICIENCY 55%
• GOLD METALLIZATION
• COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1509 is a 28 V gold metallized, Class C epitaxial silicon
NPN planar transistor designed for UHF military and commercial
equipment. The MS1508 is an internally matched, broadband
device optimized for operation within the 100 – 500 MHz fre-
quency range. This device utilizes diffused emitter resistors
to achieve 5:1 VSWR load mismatch capability at rated
operating conditions.
MS1509
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VCES
VEBO
IC
PDISS
TJ
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
TSTG
Storage Temperature
Thermal Data
RTH(J-C)
Thermal Resistance Junction-case
Value
60
33
60
4.0
15
260
+200
-65 to +150
0.67
MS1509.PDF 5-28-03
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
V
V
V
V
A
W
°C
°C
°C/W
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