MT16VDDF12864HY-335 查看數據表（PDF） - Micron Technology

零件编号

产品描述 (功能)

生产厂家

MT16VDDF12864HY-335

SMALL-OUTLINE DDR SDRAM DIMM

Micron Technology 

512MB, 1GB (x64)

200-PIN DDR SODIMM

Table 12: IDD Specifications and Conditions – 512MB

Notes: 1–5, 8, 10, 12, 48; DDR SDRAM devices only; notes appear on pages 20–23; 0°C £ TA £ +70°C; VDD, VDDQ = +2.5V ±0.2V

MAX

PARAMETER/CONDITION

OPERATING CURRENT: One device bank; Active-

Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM and

DQS inputs changing once per clock cycle; Address and

control inputs changing once every two clock cycles

OPERATING CURRENT: One device bank; Active-Read-

Precharge; Burst = 4; tRC = tRC (MIN); tCK = tCK (MIN);

IOUT = 0mA; Address and control inputs changing once

per clock cycle

PRECHARGE POWER-DOWN STANDBY CURRENT: All

device banks idle; Power-down mode; tCK = tCK (MIN);

CKE = (LOW)

IDLE STANDBY CURRENT: CS# = HIGH; All device banks

are idle; tCK = tCK (MIN); CKE = HIGH; Address and other

control inputs changing once per clock cycle. VIN = VREF

for DQ, DQS, and DM

ACTIVE POWER-DOWN STANDBY CURRENT: One device

bank active; Power-down mode; tCK = tCK (MIN);

CKE = LOW

ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH;

One device bank active; tRC = tRAS (MAX); tCK = tCK

(MIN); DQ, DM and DQS inputs changing twice per clock

cycle; Address and other control inputs changing once per

clock cycle

OPERATING CURRENT: Burst = 2; Reads; Continuous

burst; One device bank active; Address and control inputs

changing once per clock cycle; tCK = tCK (MIN); IOUT =

0mA

OPERATING CURRENT: Burst = 2; Writes; Continuous

burst; One device bank active; Address and control

inputs changing once per clock cycle; tCK = tCK (MIN); DQ,

DM, and DQS inputs changing twice per clock cycle

AUTO REFRESH BURST CURRENT:

tRC = tRFC

(MIN) tRFC =

7.8125µs

SELF REFRESH CURRENT: CKE £ 0.2V

OPERATING CURRENT: Four device bank interleaving

READs (Burst = 4) with auto precharge, tRC = minimum

tRC allowed; tCK = tCK (MIN); Address and control inputs

change only during Active READ, or WRITE commands

SYM

IDD0a

IDD1a

IDD2Pb

IDD2Fb

IDD3Pb

IDD3Nb

IDD4Ra

IDD4Wa

IDD5b

IDD5A

b

IDD6b

IDD7a

-335

1,032

1,392

64

800

480

960

1,432

1,272

4,080

96

64

3,272

-262

1,032

-26A/-

265

872

-202

992

UNIT NOTE

S

S

mA 20, 42

1,312 1,192 1,272 mA 20, 42

64

64

64

mA 21, 28,

44

720

720

720 mA 45

400

400

480 mA 21, 28,

44

800

800

800 mA 41

1,232 1,232 1,432 mA 20, 42

1,112 1,122 1,552 mA 20

3,760

96

3,760

96

3,920

96

mA 20, 44

mA 24, 44

64

2,832

64

2,832

64

2,952

mA 9

mA 20, 43

NOTE:

a - Value calculated as one module rank in this operating condition, and all other module ranks in IDD2p (CKE LOW) mode.

b - Value calculated reflects all module ranks in this operating condition.

09005aef80a646bc

DDF16C64_128x64HG_B.fm - Rev. B 7/03 EN

14

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2003 Micron Technology, Inc.

Share Link: