HYB39S64160AT 查看數據表（PDF） - Infineon Technologies
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HYB39S64160AT Datasheet PDF : 53 Pages
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HYB39S64400/800/160AT(L)
64MBit Synchronous DRAM
AC Characteristics 1)2)
TA = 0 to 70 °C; VSS = 0 V; Vdd = 3.3 V ± 0.3 V, tT = 1 ns
Parameter
Symbol
Limit Values
Unit
-8
-8B
-10
min. max. min. max. min. max.
Clock and Clock Enable
Clock Cycle Time
CAS Latency = 3 tCK
CAS Latency = 2
Clock Frequency
CAS Latency = 3 tCK
CAS Latency = 2
Access Time from Clock
CAS Latency = 3 tAC
CAS Latency = 2
Clock High Pulse Width
tCH
Clock Low Pulse Width
tCL
Transition time
tT
Setup and Hold Times
Input Setup Time
tIS
Input Hold Time
tIH
CKE Setup Time
tCKS
CKE Hold Time
tCKH
Mode Register Set-up time
tRSC
Power Down Mode Entry Time
tSB
Common Parameters
Row to Column Delay Time
tRCD
Row Precharge Time
tRP
Row Active Time
tRAS
Row Cycle Time
tRC
Activate(a) to Activate(b) Command tRRD
period
CAS(a) to CAS(b) Command period tCCD
8 – 10 – 10 – ns
10 – 12 – 15 – ns
– 125 – 100 – 100 MHz
– 100 – 83 – 66 MHz
–6
–6
6 – 7 ns 2,
7 – 8 ns 3
3 – 3 – 3 – ns
3 – 3 – 3 – ns
0.5 10 0.5 10 0.5 10 ns
2 – 2 – 2.5 – ns 4
1 – 1 – 1 – ns 4
2 – 2 – 2.5 – ns 4
1 – 1 – 1 – ns 4
16 – 20 – 20 – ns
0 8 0 10 0 10 ns
20 – 20 – 30 – ns 5
20 – 30 – 30 – ns 5
50 100k 60 100k 60 100k ns 5
70 – 80 – 90 – ns 5
16 – 20 – 20 – ns 5
1 – 1 – 1 – CLK
Semiconductor Group
16
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