NAND512W3M2 查看數據表（PDF） - STMicroelectronics

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NAND512W3M2

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

STMicroelectronics 

Summary description

NAND256-M, NAND512-M, NAND01G-M

Table 4.

Signal Names - NAND Flash & DDR LPSDRAM

NAND Flash

I/O0-I/O15

Data Inputs/Outputs

AL

Address Latch Enable

CL

Command Latch Enable

EF

Chip Enable

R

Read Enable

RB

Ready/Busy (open-drain output)

WF

Write Enable

WP

Write Protect

VDDF

VSSF

Supply Voltage

Ground

DDR LPSDRAM

A0-A12

Address Inputs

A10 determines the Precharge mode.

BA0-BA1

Bank Select Inputs

DQ0-DQ15

Data Inputs/Outputs

UDQS-LDQS

Data Strobe Inputs/Outputs

K

Clock Input

K

Clock Input

KE

Clock Enable Input

ED

WD

RAS

Chip Select inputs

Write Enable Input

Row Address Strobe Input

CAS

Column Address Strobe Input

DQM0

DQ Mask Enable Input (controls DQ0-DQ7)

DQM1

DQ Mask Enable Input (controls DQ8-DQ15)

VDDD

VDDQD

VSSD

VSSQD

NC

Supply Voltage

Input/Output Supply Voltage

Ground

Input/Output Ground

Not Connected Internally

DU

Do Not Use

12/23

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