NAND512R3M0 查看數據表（PDF） - STMicroelectronics

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NAND512R3M0

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

STMicroelectronics 

Maximum rating

2

Maximum rating

NAND256-M, NAND512-M, NAND01G-M

Stressing the device above the rating listed in the Absolute Maximum Ratings table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

Program and other relevant quality documents.

Table 5. Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Min Max

TA

TBIAS

TSTG

VIO(2)

Ambient Operating Temperature

Temperature Under Bias

-30

85

°C

TBD(1) TBD(1) °C

Storage Temperature

-55

125

°C

NAND Flash Input or Output

1.8V device

-0.6

2.7

V

Voltage

3V device

-0.6

4.6

V

LPSDRAM Input or Output

Voltage

1.8V device

-0.5

2.6

V

VDDF

1.8V device

-0.6

2.7

V

NAND Flash Supply Voltage

3V device

-0.6

4.6

V

VDDD, VDDQD

LPSDRAM Short

Circuit Output

Current

LPSDRAM Supply Voltage

IOS

1.8V device

-0.5

2.6

V

50

mA

LPSDRAM Power

Dissipation

PD

1.0

W

1. TBD stands for To Be Defined.

2. Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins.

Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.

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