NAND01GR3A2CV1T 查看數據表（PDF） - STMicroelectronics

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产品描述 (功能)

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NAND01GR3A2CV1T

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

STMicroelectronics 

NAND128-A, NAND256-A, NAND512-A, NAND01G-A

Figure 32. Block Erase AC Waveform

CL

E

tWLWL

(Write Cycle time)

W

tWHBL

tBLBH3

(Erase Busy time)

AL

R

I/O

60h

Add. Add. Add.

cycle 1 cycle 2 cycle 3

D0h

70h

SR0

RB

Block Erase

Block Address Input

Setup Command

Confirm

Code

Block Erase

Note: Address cycle 3 is required for 512Mb and 1Gb devices only.

Figure 33. Reset AC Waveform

Read Status Register

ai08038b

W

AL

CL

R

I/O

FFh

RB

tBLBH4

(Reset Busy time)

ai08043

45/57

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