NAND01GR3A2CV1T 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

NAND01GR3A2CV1T

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

STMicroelectronics 

NAND128-A, NAND256-A, NAND512-A, NAND01G-A

Ready/Busy Signal Electrical Characteristics

Figures 35, 34 and 36 show the electrical charac-

teristics for the Ready/Busy signal. The value re-

quired for the resistor RP can be calculated using

the following equation:

RPmin= -(--V-----D----D-----m-I--O--a---Lx-----–+----V----I-O-L---L----m-----a---x----)

So,

RPmin(1.8V)= 3----m---1--A-.-8---5-+---V----I---L--

RPmin(3V)= 8----m----3-A--.--2--+-V------I---L--

where IL is the sum of the input currents of all the

devices tied to the Ready/Busy signal. RP max is

determined by the maximum value of tr.

Figure 34. Ready/Busy AC Waveform

ready VDD

VOL

busy

tf

VOH

tr

AI07564B

Figure 35. Ready/Busy Load Circuit

VDD

DEVICE

RP

ibusy

RB

Open Drain Output

VSS

AI07563B

Figure 36. Resistor Value Versus Waveform Timings For Ready/Busy Signal

400

300

200

1.7

100

30

0 1.7

1

Note: T = 25°C.

46/57

VDD = 1.8V, CL = 30pF

VDD = 3.3V, CL = 100pF

4

400

3

2

0.85

60

1.7

90

0.57

1.7

2

3

RP (KΩ)

120

1

0.43

1.7

4

tf

300

2.4

200

300

200

1.2

100 100

0.8

0 3.6

1

3.6

3.6

2

3

RP (KΩ)

tr

ibusy

4

400

3

2

1

0.6

3.6

4

ai07565B

Share Link: