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NB3N508S 查看數據表(PDF) - ON Semiconductor

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NB3N508S Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NB3N508S
Table 2. ATTRIBUTES
Characteristics
ESD Protection
Human Body Model
Machine Model
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
TSSOP16
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
> 4 kV
> 400 V
Level 3
UL 94 V0 @ 0.125 in
6000 Devices
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
VDD
VI
IOUT
Positive Power Supply
Input Voltage (VIN)
MLVDS Output Current
GND = 0 V
4.6
V
GND = 0 V
GND v VI v VDD
VDD
V
Continuous
Surge
25
mA
50
mA
TA
TSTG
qJA
Operating Temperature Range
Storage Temperature Range
Thermal Resistance
(JunctiontoAmbient)
0 lfpm
500 lfpm
TSSOP–16
TSSOP–16
0 to +70
65 to +150
138
108
°C
°C
°C/W
°C/W
qJA
Thermal Resistance (JunctiontoCase) (Note 2)
TSSOP16
33 to 36
°C/W
TSOL
Wave Solder
PbFree
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board 2S2P (2 Signal, 2 Power).
Table 4. DC CHARACTERISTICS (VDD = 3.135 V to 3.465 V, GND = 0 V, TA = 0°C to +70°C)
Symbol
Characteristic
Min
Typ
Max
Unit
IDD
VIA
VOD
DVOD
Power Supply Current (outputs loaded with RL = 50 W)
VCXO Control Voltage, VIN
Differential Output Voltage (Note 3)
Change in Magnitude of VOD for Complementary Output States
(Notes 3, 6)
42
52
62
mA
0
3.3
V
480
565
650
mV
50
50
mV
VOS
Offset Voltage (See Figure 4)
300
DVOS
Change in Magnitude of VOS for Complementary Output States
50
(Note 6)
2100
mV
50
mV
VOH
Output HIGH Voltage (Note 4)
VOL
Output LOW Voltage (Note 5)
ISC
Output Short Circuit Current
25
CLK or CLK to GND
1300
700
2425
mV
mV
43
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. MLVDS outputs require 50 W receiver termination resistor between differential. pair. See Figure 3
4. VOHmax = VOSmax + ½ VODmax.
5. VOLmax = VOSmin ½ VODmax.
6. Parameters guaranteed by design but not tested in production.
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