NCP382LMN10AATXG 查看數據表（PDF） - ON Semiconductor

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NCP382LMN10AATXG

Fixed Current-Limiting Power-Distribution Switches

ON Semiconductor 

NCP382

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

From IN to OUT1, From IN to OUT2 Supply Voltage (Note 1)

VIN , VOUT1,VOUT2

−7.0 to +7.0

V

IN, OUT1,OUT2, EN1, EN2, FLAG1, FLAG2 (Note 1)

VIN, VOUT1, VOUT2, VEN1, VEN2,

−0.3 to +7.0

V

VFLAG1, VFLAG2

FLAG1, FLAG2 sink current

ISINK

1.0

mA

ESD Withstand Voltage (IEC 61000−4−2) (output only, when

bypassed with 1.0 mF capacitor minimum)

ESD IEC

15 Air, 8 contact

kV

Human Body Model (HBM) ESD Rating are (Note 2)

ESD HBM

2000

V

Machine Model (MM) ESD Rating are (Note 2)

ESD MM

200

V

Latch−up protection (Note 3)

− Pins IN, OUT1, OUT2, FLAG1, FLAG2

− EN1, EN2

LU

mA

100

Maximum Junction Temperature (Note 4)

Storage Temperature Range

Moisture Sensitivity (Note 5)

TJ

TSTG

MSL

−40 to + TSD

°C

−40 to + 150

°C

Level 1

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. According to JEDEC standard JESD22−A108.

2. This device series contains ESD protection and passes the following tests:

Human Body Model (HBM) +/−2.0 kV per JEDEC standard: JESD22−A114 for all pins.

Machine Model (MM) +/−200 V per JEDEC standard: JESD22−A115 for all pins.

3. Latch up Current Maximum Rating: $100 mA per JEDEC standard: JESD78 class II.

4. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation.

5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020.

OPERATING CONDITIONS

Symbol

Parameter

Conditions

Min Typ Max Unit

VIN

VENX

TA

ISINK

CIN

COUTX

RqJA

Operational Power Supply

Enable Voltage

Ambient Temperature Range

FLAG sink current

Decoupling input capacitor

Decoupling output capacitor

Thermal Resistance Junction−to−Air

USB port per Hub

DFN−8 package (Notes 6 and 7)

SOIC−8 package (Notes 6 and 7)

2.5

5.5

V

0

5.5

−40 25

+85

°C

1

mA

1

mF

120

mF

140

°C/W

210

°C/W

TJ

IOUTX

Junction Temperature Range

Recommended Maximum DC

current

DFN−8 package

SOIC−8 package

−40 25 +125

°C

2

A

1.5

A

PD

Power Dissipation Rating (Note 8)

TA v 25°C

DFN−8 package

850

mW

SOIC−8 package

570

mW

TA = 85°C

DFN−8 package

428

mW

SOIC−8 package

285

mW

6. A thermal shutdown protection avoids irreversible damage on the device due to power dissipation.

7. The RqJA is dependent of the PCB heat dissipation. Announced thermal resistance is the unless PCB dissipation and can be improve with

final PCB layout.

8.

The

maximum

power

dissipation

(PD)

is

given

by

the

following

formula:

PD

+

TJMAX *

RqJA

TA

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