NCV7001DWR2 查看數據表（PDF） - ON Semiconductor

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NCV7001DWR2

Quad Variable Reluctance Sensor Interface IC

ON Semiconductor 

22 k

Variable

Reluctance

Sensor

1/4 W

0.001 mF

200 V

22 k

1/4 W

22 k

Variable

Reluctance

Sensor

1/4 W

0.001 mF

200 V

22 k

1/4 W

22 k

Variable

Reluctance

Sensor

1/4 W

0.001 mF

200 V

22 k

1/4 W

22 k

Variable

Reluctance

Sensor

1/4 W

0.001 mF

200 V

22 k

1/4 W

0.01 mF

50 V

0.01 mF

50 V

0.01 mF

50 V

0.01 mF

50 V

0.01 mF

50 V

0.01 mF

50 V

0.01 mF

50 V

0.01 mF

50 V

NCV7001

0.047 mF

47 k

47 k

RDLY

NOUT1

NTEST NOUT2

INN1

WDO

INP1

LVI

INN2

NLVI

INP2

WD2

INP3

INN3

VCC

WD1

INP4

OLE

INN4

WDLY

THOLD NOUT3

GND

NOUT4

NCV7001

0.1 mF VCC

0.1 mF

47 k

Figure 1. Application Diagram

MAXIMUM RATINGS*

Rating

Value

Unit

DC Supply Voltage (VCC)

Input Clamp Current

-0.3 to 7.0

V

-10, 10

mA

ESD Capability (Human Body Model)

2.0

kV

Storage Temperature

-55 to 150

°C

Operating Junction Temperature

-40 to 150

°C

Package Thermal Resistance:

Junction-to-Case, RqJC

Junction-to-Ambient, RqJA

Lead Temperature Soldering:

Reflow: (SMD styles only) (Notes 1, 2)

16

80

240 peak

°C/W

°C/W

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

*The maximum package power dissipation must be observed.

1. 60 second maximum above 183°C.

2. -5°C/+0°C allowable conditions.

http://onsemi.com

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