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NE1619DS 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
NE1619DS
Philips
Philips Electronics Philips
NE1619DS Datasheet PDF : 19 Pages
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Philips Semiconductors
HECETA4 Temperature and voltage monitor
Product data sheet
NE1619
DC ELECTRICAL CHARACTERISTICS
VDD = 3.3 V (see Note 4); Tamb = 0 °C to +125 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITION
MIN.
TYP.
MAX.
VDD
Supply voltage
IDD
Supply current
Standby mode
IDD
Supply current
Operating mode
tC
Total monitoring cycle time1
All conversions
TR
Temperature resolution
Local and Remote
Tamb = 25 °C
TAI
Internal temperature accuracy
Tamb = 0 °C to +120 °C
Tamb = 25 °C
TAE
External temperature accuracy
Tamb = 0 °C to +120 °C
IS
Remote source current
High level
Low level
2.8
3.3
5.5
100
250
500
0.25
0.50
±1.0
±2.0
±3.0
±3.0
±5.0
100
10
Voltage-to-Digital converter (12VIN, 5VIN, 3.3VIN, 2.5VIN, VCCP, VDD)
VUE
Unadjusted error
±2.0
VDNL
Differential non-linearity error
±1.0
VRIN
VIN input resistance
VPSS
VIN power supply sensitivity
Digital output (SDA, A02)
100
200
±1.0
VOH
Output High voltage
VOL
Output Low voltage
IOH
Output High leakage current
SMB digital input voltages (SDA, SCL)
IOUT = –3.0 mA, VDD = 2.8 V
IOUT = 3.0 mA, VDD = 3.8 V
VOUT = VDD
2.4
0.4
0.1
10.0
VIH
Input High voltage
VIL
Input Low voltage
Digital input voltages (A0, VID0–4, NT_IN3)
0.6VDD
0.3VDD
VIH
Input High voltage
VIL
Input Low voltage
Digital input current (all digital inputs)
2.0
0.4
IIH
Input High current
VIN = VDD
–1.0
IIL
Input Low current
VIN = GND
1.0
CIN
Input capacitance
20.0
NOTES:
1. Total monitoring cycle time includes all temperature conversions and all voltage conversions.
2. When A0 is selected as output in NAND-TREE test mode.
3. When D– is selected as input in NAND-TREE test mode.
4. Operating the device at 2.8 V to 5.5 V is allowed, but parameter values in characteristics table are not guaranteed.
UNIT
V
µA
µA
sec
°C
°C
°C
°C
°C
µA
µA
%FS
LSB
k
%/V
V
V
µA
V
V
V
V
µA
µA
pF
2004 Oct 05
8

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