NE713 查看數據表（PDF） - NEC => Renesas Technology

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NE713

L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

NE713

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC

Gate to Source Leak Current

Saturated Drain Current

Gate to Source Cut off Voltage

Transconductance

Noise Figure

Associated Gain

Noise Figure

Associated Gain

Output Power at 1 dB Gain

Compression Point

Thermal Resistance

SYMBOL

IGSO

IDSS

VGS (off)

gm

NF

Ga

NF

Ga

Po (1 dB)

Rth

MIN.

−

20

−0.5

20

11.5

8.0

TYP.

1.0

40

−1.1

50

0.6

14.0

1.6

9.5

14.5

MAX.

10

120

−3.5

−

0.7

1.8

190

450

UNIT

µA

mA

V

mS

dB

dB

dB

dB

dBm

°C/W

°C/W

TEST CONDITIONS

VGS = −5 V

VDS = 3 V, VGS = 0 V

VDS = 3 V, ID = 100 µA

VDS = 3 V, ID = 10 mA

f = 4 GHz VDS = 3 V

ID = 10 mA

f = 12 GHz

f = 12 GHz VDS = 3 V

ID = 30 mA

NE71300 Channel to case

NE71383B

PACKAGE DIMENSIONS (Unit : mm) [NE71383B]

1.88 ± 0.3

1

4.0 MIN.

2

4.0 MIN.

4

3

1.0 ± 0.1

1. Source

2. Drain

3. Source

4. Gate

2

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