HGTD6N50E1 查看數據表（PDF） - Intersil
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HGTD6N50E1 Datasheet PDF : 4 Pages
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HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S
Typical Performance Curves (Continued)
5
TJ = +150oC
4
VGE = 10V
3
VGE = 15V
2
12
10
8
VGE = 15V
6
VGE = 10V
4
1
0
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
2
0
+25
+50
+75
+100
+125
TC, CASE TEMPERATURE (oC)
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
+150
500
f = 1MHz
400
300
0.3
TJ +150oC, VGE = 15V, RG = 50Ω,
VCE = 400V, L = 50µH
0.2
200
CISS
100
COSS
CRSS
0
0
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
0.1
0.0
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
1.5
TJ = +150oC, VGE = 10V
RG = 25Ω, L = 50µH
1.0
0.5
VCE = 400V
10
TJ = +150oC, VGE = 10V
RG = 25Ω, L = 50µH
1.0
VCE = 400V
VCE = 200V
0.0
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
0.1
1
10
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT (TYPICAL)
1972
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