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NLX2G04 查看數據表(PDF) - ON Semiconductor

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产品描述 (功能)
生产厂家
NLX2G04
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NLX2G04 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NLX2G04
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
TA = −555C
VCC
Test
TA = 255C
to +1255C
(V)
Condition
Min Typ Max Min Max Unit
tPLH,
tPHL
Propagation Delay, Input A to Output Y
1.65
RL = 1 MW,
CL = 15 pF
1.8 2.3 9.2 1.8
11
ns
1.8
RL = 1 MW,
1.8 4.4 7.6 1.2 8.4
CL = 15 pF
2.3−2.7
RL = 1 MW,
CL = 15 pF
1.2 3.0 5.1 1.2 5.6
3.0−3.6
RL = 1 MW,
CL = 15 pF
0.8 2.2 3.4 0.8 3.8
RL = 500 W,
CL = 50 pF
1.2 2.9 4.5 1.2 5.0
4.5−5.5
RL = 1 MW,
CL = 15 pF
0.5 1.8 2.8 0.5 3.1
RL = 500 W,
CL = 50 pF
0.8 2.3 3.6 0.8 4.0
CIN
Input Capacitance
5.5
VIN = 0 V or VCC
2.5
pF
CPD
Power Dissipation Capacitance (Note 3)
3.3
10 MHz
9
pF
5.5
VIN = 0 V or VCC
11
3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
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