NVTFS5811NL(2011) 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
NVTFS5811NL Datasheet PDF : 6 Pages
| |||
NVTFS5811NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IGSS
VGS = 0 V, ID = 250 mA
40
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
Forward Transconductance
gFS
VDS = 5 V, ID = 10 A
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VGS = 4.5 V, VDS = 32 V, ID = 20 A,
RG = 2.5 W
VGS = 10 V, VDS = 32 V, ID = 20 A
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 32 V,
ID = 20 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 20 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta
VGS = 0 V, dIS/dt = 100 A/ms,
tb
IS = 20 A
Reverse Recovery Charge
QRR
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
1.0
mA
10
"100
nA
2.2
V
5.8
6.7
mW
8.8
10
24.6
S
1570
pF
215
157
17
nC
1
nC
5
9
30
nC
11
ns
55
20
40
0.83
1.2
V
0.70
22
ns
12
10
17
nC
http://onsemi.com
2
Share Link: 