P600S 查看數據表（PDF） - Won-Top Electronics
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P600S Datasheet PDF : 4 Pages
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WTE
POWER SEMICONDUCTORS
Features
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
P600S Pb
6.0A STANDARD DIODE
A
B
A
Mechanical Data
Case: P-600, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
C
D
P-600
Dim
Min
Max
A
25.4
—
B
8.60
9.10
C
1.20
1.30
D
8.60
9.10
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TA = 60°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 6.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RθJA
Tj
TSTG
P600S
1200
840
6.0
400
1.0
5.0
1.0
150
20
-50 to +150
-50 to +150
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
Unit
V
V
A
A
V
µA
mA
pF
°C/W
°C
°C
P600S
1 of 4
© 2006 Won-Top Electronics
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