Philips Semiconductors
Dual-band power amplifier controller for
GSM, PCN and DCS
Product specification
PCF5079
7.8 Configurations
Table 1 Operating conditions
POWER-UP INPUT (PU)
0
1
OPERATING MODE
disabled; reset
enabled
Table 2 Band selection configuration
BAND SELECT
INPUT (BS)(1)
0
1
BAND
GSM
DCS
DRIVER
SWITCHES
OP4G → active;
SFG → working;
OP4D → power-down SFD → open
OP4D → active;
SFD → working;
OP4G → power-down SFG → open
Note
1. BS input has to be set before the PU transition logic 0 to logic 1.
CONTROL VOLTAGE
VVCG → working;
VVCD → VSS
VVCD → working;
VVCG → VSS
7.9 Summary of current and voltage definitions
Refer to Figs 1, 4 and 12.
SYMBOL
VVS1
VVS2
VVDAC
VVCG
VVCD
Vhome
Vprebias
Ibias1
Ibias2
RFin
RFout
DESCRIPTION
sensor signal of incident RF power or power sensor 1 signal
sensor signal of reflected RF wave or power sensor 2 signal
DAC voltage
control voltage of PA
control voltage of PA
home position voltage
prebias reference voltage; used at the start-up
bias current for detector diode D1
bias current for detector diode D2
input signal to the power amplifier
output signal from the power amplifier
7.10 Timing
Refer to Figs 4 and 5.
SYMBOL
td1
td2
td3
td4
td5
DEFINITION
delay time; VDD application to PU input transition logic 0 to 1
delay time; PU input transition logic 0 to 1 to VVDAC ramp-up
VVDAC ramp-up detection time
delay time; ramp-up detected to VVCD, VVCG = Vhome
delay time; PU input transition logic 1 to 0 to end of burst
MIN.
5.0
20
−
−
−
MAX.
−
−
3.0
2.6
1.0
UNIT
µs
µs
µs
µs
µs
2001 Nov 21
10