PD57070STR-E(2006) 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

PD57070STR-E
(Rev.:2006)

RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

STMicroelectronics 

PD57070-E

PD57070S-E

RF POWER Transistors, LDMOST plastic family

N-Channel enhancement-mode lateral MOSFETs

General features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 70W with 14.7dB gain @ 945MHz / 28V

■ New RF plastic package

Description

The PD57070 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 28 V in common source mode at

frequencies of up to 1 GHz. PD57070 boasts the

excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first

true SMD plastic RF power package, PowerSO-

10RF. PD57070’s superior linearity performance

makes it an ideal solution for base station

applications.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of

assembly.

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Pin connection

Source

Gate

Drain

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

Order codes

Part number

PD57070-E

PD57070S-E

PD57070TR-E

PD57070STR-E

Package

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

PowerSO-10RF (formed lead)

PowerSO-10RF (straight lead)

Marking

PD57070

PD57070S

PD57070

PD57070S

Packaging

Tube

Tube

Tape and reel

Tape and reel

July 2006

Rev 1

1/22

www.st.com

22

Share Link: