Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
PESD12VS2UT 查看數據表(PDF) - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
PESD12VS2UT
Double ESD protection diodes in SOT23 package
NXP Semiconductors.
PESD12VS2UT Datasheet PDF : 13 Pages
1
2
3
4
5
6
7
8
9
10
Next
Last
NXP Semiconductors
Double ESD protection diodes in SOT23
package
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
V
RWM
I
RM
V
BR
C
d
V
(CL)R
reverse stand-off voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
reverse leakage current
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
breakdown voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
diode capacitance
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
clamping voltage
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
CONDITIONS
V
RWM
= 3.3 V
V
RWM
= 5.2 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
Z
= 5 mA
f = 1 MHz; V
R
= 0 V
notes 1 and 2
I
pp
= 1 A
I
pp
= 18 A
I
pp
= 1 A
I
pp
= 15 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 3 A
Product data sheet
PESDxS2UT series
MIN. TYP. MAX. UNIT
−
−
3.3
V
−
−
5.2
V
−
−
12
V
−
−
15
V
−
−
24
V
−
0.7
2
µ
A
−
0.15 1
µ
A
−
<0.02 1
µ
A
−
<0.02 1
µ
A
−
<0.02 1
µ
A
5.2
5.6
6.0
V
6.4
6.8
7.2
V
14.7 15.0 15.3 V
17.6 18.0 18.4 V
26.5 27.0 27.5 V
−
207
300
pF
−
152
200
pF
−
38
75
pF
−
32
70
pF
−
23
50
pF
−
−
7
V
−
−
20
V
−
−
9
V
−
−
20
V
−
−
19
V
−
−
35
V
−
−
23
V
−
−
40
V
−
−
36
V
−
−
70
V
2004 Apr 15
5
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]