PSMN1R0-30YLC(2010) 查看數據表（PDF） - NXP Semiconductors.

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PSMN1R0-30YLC
(Rev.:2010)

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK

NXP Semiconductors. 

PSMN1R0-30YLC

N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK

Rev. 02 — 23 November 2010

Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

„ High reliability Power SO8 package,

qualified to 175°C

„ Optimised for 4.5V Gate drive utilising

Superjunction technology

„ Ultra low QG, QGD, & QOSS for high

system efficiencies at low and high

loads

„ Ultra low Rdson and low parasitic

inductance

1.3 Applications

„ DC-to-DC converters

„ Lithium-ion battery protection

„ Load switching

„ Power OR-ing

„ Server power supplies

„ Sync rectifier

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

VDS

drain-source

Tj ≥ 25 °C; Tj ≤ 175 °C

-

voltage

ID

drain current

Tmb = 25 °C; VGS = 10 V;

[1] -

see Figure 1

Ptot

total power

Tmb = 25 °C; see Figure 2

-

dissipation

Tj

junction

-55

temperature

Static characteristics

RDSon

drain-source

on-state

resistance

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

-

see Figure 12

VGS = 10 V; ID = 25 A; Tj = 25 °C;

-

see Figure 12

Typ Max Unit

-

30 V

-

100 A

-

137 W

-

175 °C

1.1 1.4 mΩ

0.85 1.15 mΩ

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