PSMN1R0-30YLC(2010) 查看數據表（PDF） - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
PSMN1R0-30YLC Datasheet PDF : 15 Pages
| |||
NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
QG(tot)
gate-drain charge VGS = 4.5 V; ID = 25 A;
total gate charge VDS = 15 V; see Figure 14;
see Figure 15
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
14.6 -
nC
-
50 -
nC
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN1R0-30YLC
LFPAK
4. Marking
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 4. Marking codes
Type number
PSMN1R0-30YLC
Marking code[1]
1C030L
[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 23 November 2010
© NXP B.V. 2010. All rights reserved.
2 of 15
Share Link: 