NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK
8
RDS on
(mΩ)
6
4
2
0
0
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2.4
VGS (V) =2.6
2.8
3.0
3.5
4.5
10
25
50
75 ID (A) 100
2
a
1.5
1
003aae946
4.5V
VGS = 10V
0.5
0
-6 0
0
60
120
180
Tj ( C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
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10
VGS
(V)
8
6
4
2
0
0
6V
40
003aae952
15V
VDS = 24V
80 QG (nC) 120
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 23 November 2010
© NXP B.V. 2010. All rights reserved.
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