PSMN1R0-30YLC 查看數據表（PDF） - NXP Semiconductors.
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PSMN1R0-30YLC
NXP Semiconductors.
PSMN1R0-30YLC Datasheet PDF : 15 Pages
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NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C;
see Figure 4
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp ≤ 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped;
see Figure 3
[1] Continuous current is limited by package.
Min
-
-
-20
[1] -
[1] -
-
Max Unit
30 V
30 V
20 V
100 A
100 A
1450 A
-
272 W
-55 175 °C
-55 175 °C
-
260 °C
960 -
V
[1] -
-
100 A
1450 A
-
259 mJ
400
ID
(A)
320
240
003aae940
120
Pder
(%)
80
03na19
160
40
(1)
80
0
0
50
100
150
200
Tmb (C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 July 2011
© NXP B.V. 2011. All rights reserved.
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