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PSMN1R0-30YLC 查看數據表(PDF) - Philips Electronics

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PSMN1R0-30YLC Datasheet PDF : 15 Pages
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NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mlogic level MOSFET in LFPAK using
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown voltage
gate-source threshold voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 10 mA; VDS = VGS; Tj = 150 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 12
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 150 °C;
see Figure 12; see Figure 13
RG
gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
total gate charge
ID = 25 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
see Figure 15; see Figure 14
ID = 0 A; VDS = 0 V; VGS = 10 V;
see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold gate-source
charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold gate-source
charge
QGD
VGS(pl)
Ciss
Coss
Crss
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
ID = 25 A; VDS = 15 V; see Figure 14
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.05 1.41 1.95 V
0.5 -
-
V
-
-
2.25 V
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
-
100 nA
-
1.1 1.4 m
-
-
2.4 m
-
0.85 1.15 m
-
-
1.85 m
-
1.1 2.2
-
103.5 -
nC
-
50
-
nC
-
96.5 -
nC
-
12.9 -
nC
-
10.1 -
nC
-
2.8 -
nC
-
14.6 -
nC
-
2.2 -
V
-
6645 -
pF
-
1210 -
pF
-
481 -
pF
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 July 2011
© NXP B.V. 2011. All rights reserved.
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