NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
300
gfs
(S )
240
180
120
60
0
0
003aae949
25
50
75
100
ID (A)
100
ID
(A)
75
003aae951
50
25
0
0
Tj = 150 C
Tj = 25 C
1
2
3 VGS (V) 4
Fig 8. Forward transconductance as a function of
drain current; typical values
10-1
ID
(A)
10-2
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Min Typ Max
10-3
10-4
10-5
10-6
0
1
2
3
VGS (V)
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
3
VGS (th)
(V)
Max (1mA)
2
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ID = 5mA
1mA
1 Min (5mA)
0
-6 0
0
60
120
180
Tj ( C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN1R0-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 July 2011
© NXP B.V. 2011. All rights reserved.
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